US 12,351,454 B2
Method for preparing nanocrystal with core-shell structure
Luling Cheng, Huizhou (CN); and Yixing Yang, Huizhou (CN)
Assigned to TCL TECHNOLOGY GROUP CORPORATION, Huizhou (CN)
Filed by TCL TECHNOLOGY GROUP CORPORATION, Huizhou (CN)
Filed on Sep. 29, 2020, as Appl. No. 17/037,609.
Application 17/037,609 is a continuation of application No. PCT/CN2019/110192, filed on Oct. 9, 2019.
Claims priority of application No. 201811171921.9 (CN), filed on Oct. 9, 2018; application No. 201811171925.7 (CN), filed on Oct. 9, 2018; application No. 201811172936.7 (CN), filed on Oct. 9, 2018; application No. 201811172946.0 (CN), filed on Oct. 9, 2018; and application No. 201811212274.1 (CN), filed on Oct. 9, 2018.
Prior Publication US 2021/0024356 A1, Jan. 28, 2021
Int. Cl. C01B 19/04 (2006.01); C09K 11/02 (2006.01); C09K 11/88 (2006.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01)
CPC C01B 19/04 (2013.01) [C09K 11/02 (2013.01); C09K 11/88 (2013.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A method for preparing nanocrystals, the method comprising:
providing quantum dot cores;
performing N growth processes of shell layers on the quantum dot cores, thereby preparing N shell layers on a quantum dot core to form a nanocrystal with a core-shell structure, wherein:
a shell source for performing the N growth of the shell layers includes a shell source cation precursor and a shell source anion precursor, and the shell source cation precursor is a metal organic carboxylate, and
the N growth processes include one or more groups of M growth processes of adjacent shell layers, N is a positive integer greater than or equal to 2, and M is a positive integer and N/3≤M≤N−1; and
between performing each group of the M growth processes of adjacent shell layers, mixing one of organic amine and organic carboxylic acid into a shell-layer-growth-reaction-system after a previous shell layer has formed, to form a mixed system, and heating the mixed system, and
growing a subsequent shell layer over the previous shell layer;
wherein mixing one of organic amine and organic carboxylic acid into the shell-layer-growth-reaction-system after the previous shell layer has formed, to form the mixed system and heating the mixed system, include:
mixing one of the organic amine and the organic carboxylic acid with the shell layer growth reaction system, by a ratio between a molar amount of the organic amine and a mass of the quantum dot cores of (0.2˜0.9 mmol): 10 mg or a ratio between a molar amount of the organic carboxylic acid and a mass of the quantum dot cores of (0.2˜0.9 mmol):10 mg, after the previous shell layer has formed, to form the mixed system; and
heating the mixed system.