US 12,351,451 B2
Fabrication of MEMS structures from fused silica for inertial sensors
Christopher Paul Fell, Cheltenham (GB); Ian Michael Sturland, Bristol (GB); and Tracey Ann Hawke, Bristol (GB)
Assigned to ATLANTIC INERTIAL SYSTEMS LIMITED, Plymouth (GB)
Filed by Atlantic Inertial Systems Limited, Plymouth (GB)
Filed on Aug. 22, 2022, as Appl. No. 17/892,443.
Claims priority of application No. 21275116.8 (EP), filed on Aug. 24, 2021.
Prior Publication US 2023/0067030 A1, Mar. 2, 2023
Int. Cl. B81B 3/00 (2006.01); B81C 1/00 (2006.01); G01C 19/5684 (2012.01); G01C 19/5755 (2012.01); G01C 19/5769 (2012.01)
CPC B81B 3/0072 (2013.01) [B81C 1/00666 (2013.01); G01C 19/5684 (2013.01); G01C 19/5755 (2013.01); G01C 19/5769 (2013.01); B81B 2201/0242 (2013.01); B81C 2201/013 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0133 (2013.01); B81C 2201/0143 (2013.01); B81C 2201/0198 (2013.01); B81C 2203/031 (2013.01); B81C 2203/032 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method for forming a MEMS structure for an inertial sensor from fused silica, the method comprising:
depositing a conductive layer on one or more selected regions of a first surface of a fused silica substrate;
illuminating areas of the fused silica substrate with laser radiation in a pattern, the pattern defining features of the MEMS structure for an inertial sensor;
depositing a masking layer at least on the one or more selected regions of the first surface of the fused silica substrate where the conductive layer has been deposited, wherein the masking layer is deposited such that the illuminated areas of the fused silica substrate remain exposed; and
performing a first etch of the exposed areas of the fused silica substrate so as to selectively etch the pattern defining features of the MEMS structure for an inertial sensor.