US 11,057,579 B2
Anti-overexposure circuit structure and electronic device using the same
Shou-Te Wei, Taipei (TW); and Wei-Chih Chen, Taipei (TW)
Assigned to LITE-ON ELECTRONICS (GUANGZHOU) LIMITED; and LITE-ON TECHNOLOGY CORPORATION
Filed by LITE-ON ELECTRONICS (GUANGZHOU) LIMITED, Guangzhou (CN); and LITE-ON TECHNOLOGY CORPORATION, Taipei (TW)
Filed on Dec. 2, 2019, as Appl. No. 16/700,468.
Claims priority of provisional application 62/807,246, filed on Feb. 19, 2019.
Claims priority of application No. 201910341808.9 (CN), filed on Apr. 25, 2019.
Prior Publication US 2020/0267337 A1, Aug. 20, 2020
Int. Cl. H04N 5/351 (2011.01); H04N 5/3745 (2011.01); H03K 19/20 (2006.01); H03K 5/24 (2006.01)
CPC H04N 5/351 (2013.01) [H03K 5/24 (2013.01); H03K 19/20 (2013.01); H04N 5/37452 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An anti-overexposure circuit structure, comprising:
a first capacitor;
a second capacitor;
a photo diode coupled to the first capacitor and the second capacitor;
a first switch serially connected to the photo diode; and
a control circuit coupled to the first switch and configured to:
control the first switch to be at an open circuit state when state of charge (SOC) of the first capacitor or SOC of the second capacitor is lower than a predetermined level.