US 11,057,183 B2
Nonvolatile semiconductor devices including non-circular shaped channel patterns and methods of manufacturing the same
Yong-Hoon Son, Yongin-si (KR); Hanmei Choi, Seoul (KR); and Kihyun Hwang, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (KR)
Filed on Feb. 21, 2018, as Appl. No. 15/901,093.
Application 15/901,093 is a continuation of application No. 15/467,377, filed on Mar. 23, 2017, granted, now 10,164,754.
Claims priority of application No. 10-2016-0044395 (KR), filed on Apr. 11, 2016.
Prior Publication US 2018/0191481 A1, Jul. 5, 2018
Int. Cl. H04L 5/00 (2006.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11575 (2017.01); H01L 27/11582 (2017.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/792 (2006.01); H04L 1/18 (2006.01)
CPC H04L 5/0091 (2013.01) [H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01); H01L 29/66666 (2013.01); H01L 29/66833 (2013.01); H01L 29/7827 (2013.01); H01L 29/7926 (2013.01); H04L 1/1812 (2013.01)] 18 Claims
OG exemplary drawing
1. A vertical NAND non-volatile memory structure comprising:
a substrate extending horizontally;
a gate electrode extending horizontally;
a vertical block provided in an opening of the vertical NAND non-volatile memory structure, the vertical block penetrating the gate electrode and including a filling insulating pattern and a channel pattern, wherein the opening includes a linear region extending in a first horizontal direction D1 and extending regions extending in a second horizontal direction D2, and the second horizontal direction D2 is perpendicular to the first horizontal direction D1; and
wherein the channel pattern extends vertically from the substrate, and
wherein the channel pattern is disposed in the extending regions opening and has a non-circular shape extending in the second horizontal direction D2 in a plan view of the channel pattern.