US 11,057,033 B2
Hybrid power module
Edward Robert Van Brunt, Raleigh, NC (US); Adam Barkley, Durham, NC (US); Sei-Hyung Ryu, Cary, NC (US); Zachary Cole, Summers, AR (US); and Kraig J. Olejniczak, Rogers, AR (US)
Assigned to Cree, Inc., Durham, NC (US)
Filed by Cree, Inc., Durham, NC (US)
Filed on Jul. 8, 2019, as Appl. No. 16/504,908.
Claims priority of provisional application 62/866,252, filed on Jun. 25, 2019.
Prior Publication US 2020/0412359 A1, Dec. 31, 2020
Int. Cl. H03K 17/567 (2006.01); H03K 17/693 (2006.01); H03K 17/76 (2006.01); H01L 29/16 (2006.01); H03K 17/62 (2006.01)
CPC H03K 17/567 (2013.01) [H01L 29/1608 (2013.01); H03K 17/62 (2013.01); H03K 17/693 (2013.01); H03K 17/76 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A power module comprising:
a first power switching terminal and a second power switching terminal; and
a plurality of power semiconductor devices, the plurality of power semiconductor devices comprising:
at least one insulated gate bipolar transistor (IGBT); and
at least one metal-oxide-semiconductor field-effect transistor (MOSFET), wherein:
the at least one IGBT and the at least one MOSFET are coupled in parallel between the first power switching terminal and the second power switching terminal;
the at least one IGBT and the at least one MOSFET are silicon carbide semiconductor devices; and
the at least one IGBT and the at least one MOSFET are independently controllable.