US 11,056,640 B2
Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same
Bhagwati Prasad, San Jose, CA (US); Matthew Carey, San Jose, CA (US); Alan Kalitsov, San Jose, CA (US); and Bruce Terris, Sunnyvale, CA (US)
Assigned to WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US)
Filed by WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US)
Filed on Nov. 22, 2019, as Appl. No. 16/693,006.
Prior Publication US 2021/0159392 A1, May 27, 2021
Int. Cl. G11C 11/00 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01); H01F 41/32 (2006.01); H01L 43/08 (2006.01)
CPC H01L 43/02 (2013.01) [G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01F 10/329 (2013.01); H01F 10/3259 (2013.01); H01F 10/3286 (2013.01); H01F 41/32 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H01L 43/08 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A magnetoresistive memory device comprising:
a first electrode;
a second electrode;
a magnetic tunnel junction located between the first electrode and the second electrode, the magnetic tunnel junction comprising a reference layer, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer;
a hafnium oxide layer located between the second electrode and the free layer; and
a nonmagnetic metal dust layer located between the hafnium oxide layer and the free layer, wherein the nonmagnetic metal dust layer consists essentially of a single elemental metal selected from Ir, Pd, Mg, Pt, W, Ta, Hf, Pd, Ru, or Rh.