US 11,056,618 B2
Light emitting device with high near-field contrast ratio
Grigoriy Basin, San Francisco, CA (US); Lex Alan Kosowsky, San Jose, CA (US); Chee Ming Thoe, Jelutong (MY); and Choon Earn Chan, Gelugor (MY)
Assigned to Lumileds LLC, San Jose, CA (US)
Filed by LUMILEDS LLC, San Jose, CA (US)
Filed on Aug. 1, 2019, as Appl. No. 16/529,078.
Claims priority of provisional application 62/714,371, filed on Aug. 3, 2018.
Claims priority of application No. 18201119 (EP), filed on Oct. 18, 2018.
Prior Publication US 2020/0044119 A1, Feb. 6, 2020
Int. Cl. H01L 33/50 (2010.01); H01L 33/60 (2010.01)
CPC H01L 33/501 (2013.01) [H01L 33/505 (2013.01); H01L 33/60 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0058 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A light emitting device comprising:
a semiconductor light-emitting diode having a light emitting first surface, an oppositely positioned second surface, and sidewalls connecting the first and second surfaces;
a phosphor structure having a light emitting first surface, an oppositely positioned second surface, and sidewalls connecting the first and second surfaces, the second surface of the phosphor structure attached to the first surface of the semiconductor light-emitting diode;
a light reflective material disposed on the sidewalls of the light-emitting diode and the sidewalls of the phosphor structure; and
a light absorptive region in the light reflective material around a perimeter of the light emitting first surface of the phosphor structure, the light absorptive region having a flat surface coplanar with the light emitting first surface of the phosphor structure, the light absorptive region spaced apart from the perimeter of the light emitting first surface of the phosphor structure in a plane of the light emitting first surface of the phosphor structure, the light absorptive region is a thin region penetrating into the light reflective material to a depth of about 40 to about 80 microns from the flat surface of the light absorptive region.