US 11,056,593 B2
Semiconductor devices with metal contacts including crystalline alloys
Sasikanth Manipatruni, Hillsboro, OR (US); Dmitri E. Nikonov, Beaverton, OR (US); Uygar E. Avci, Portland, OR (US); Christopher J. Wiegand, Portland, OR (US); Anurag Chaudhry, Sunnyvale, CA (US); Jasmeet S. Chawla, Beaverton, OR (US); and Ian A Young, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Appl. No. 16/631,059
Filed by INTEL CORPORATION, Santa Clara, CA (US)
PCT Filed Sep. 12, 2017, PCT No. PCT/US2017/051190
§ 371(c)(1), (2) Date Jan. 14, 2020,
PCT Pub. No. WO2019/054989, PCT Pub. Date Mar. 21, 2019.
Prior Publication US 2020/0152781 A1, May 14, 2020
Int. Cl. H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/18 (2006.01); H01L 21/3105 (2006.01); H01L 21/8252 (2006.01)
CPC H01L 29/785 (2013.01) [H01L 21/28061 (2013.01); H01L 21/28264 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/18 (2013.01); H01L 29/41791 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/66522 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7839 (2013.01); H01L 21/31053 (2013.01); H01L 21/8252 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a body comprising semiconductor material;
a gate electrode at least above the body, the gate electrode comprising a crystalline alloy including a transition metal;
a gate dielectric between the gate electrode and the body; and
a layer directly between the gate dielectric and the gate electrode, wherein the layer is lattice matched to crystalline alloy.