US 11,056,583 B1
OR gate based on electron interference
koon Hoo Teo, Lexington, MA (US); and Nadim Chowdhurry, Cambridge, MA (US)
Assigned to Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US)
Filed by Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US)
Filed on Mar. 4, 2020, as Appl. No. 16/808,424.
Int. Cl. H01L 29/778 (2006.01); H03K 19/20 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); G06N 10/00 (2019.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01); H03K 19/0952 (2006.01); H01L 21/02 (2006.01)
CPC H01L 29/7786 (2013.01) [G06N 10/00 (2019.01); H01L 21/0254 (2013.01); H01L 21/30621 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H03K 19/0952 (2013.01); H03K 19/20 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An OR-gate device comprising:
two cross shaped structures, each cross shaped structure includes a channel, such that at an end of each channel is an ohmic contact Y connecting the two cross shaped structures, wherein each cross shaped structure includes
an epitaxial layer forming the channel, and includes a III-N heterostructure such as InAlN/GaN, such that an amount of an In concentration of the InAlN/GaN is tuned to lattice match with GaN, resulting in electron mobility to generate ballistic electrons;
a fin structure is located in the channel, and includes
a gate formed transversely to a longitudinal axis of the channel, and the gate is controlled using a voltage over the fin structure, such that the fin structure is formed to induce an energy-field structure that is shifted by an amount of the voltage to control an opening of the gate that the flow of ballistic electrons is passing through, which in turn changes a depletion width, subjecting the ballistic electrons to interference,
wherein the semiconductor device is turned on by applying an amount of the voltage, and turned off by applying no amounts of the voltage.