US 11,056,567 B2
Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
Dong Li, Phoenix, AZ (US); Peng-Fu Hsu, Scottsdale, AZ (US); Petri Raisanen, Gilbert, AZ (US); Moataz Bellah Mousa, Chandler, AZ (US); Ward Johnson, Gilbert, AZ (US); and Xichong Chen, Chandler, AZ (US)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on May 1, 2019, as Appl. No. 16/400,814.
Claims priority of provisional application 62/670,312, filed on May 11, 2018.
Prior Publication US 2019/0348515 A1, Nov. 14, 2019
Int. Cl. H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01)
CPC H01L 29/42372 (2013.01) [H01L 21/28088 (2013.01); H01L 29/4925 (2013.01)] 29 Claims
OG exemplary drawing
 
1. A method for forming a doped metal carbide film on a substrate, the method comprising:
depositing the doped metal carbide film on the substrate utilizing at least one deposition cycle of a cyclical deposition process, and
contacting the doped metal carbide film with a plasma generated from a hydrogen-containing gas,
wherein depositing the doped metal carbide film is performed in a first reaction chamber and contacting the doped metal carbide film with the plasma is performed in a second reaction chamber.