US 11,056,564 B2
Method of manufacturing a memory device
Cheng-Hong Wei, Taichung (TW); Chien-Hsiang Yu, Taichung (TW); and Hung-Sheng Chen, Taichung (TW)
Assigned to Winbond Electronics Corp., Taichung (TW)
Filed by Winbond Electronics Corp., Taichung (TW)
Filed on Aug. 15, 2019, as Appl. No. 16/542,282.
Claims priority of application No. 107146380 (TW), filed on Dec. 21, 2018.
Prior Publication US 2020/0203492 A1, Jun. 25, 2020
Int. Cl. H01L 29/417 (2006.01); H01L 27/11521 (2017.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 21/027 (2006.01)
CPC H01L 29/41758 (2013.01) [H01L 21/0217 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 21/76877 (2013.01); H01L 27/11521 (2013.01); H01L 29/40114 (2019.08); H01L 29/66825 (2013.01); H01L 29/7883 (2013.01); H01L 21/0276 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method of manufacturing a memory device, comprising:
forming a plurality of stack structures on a substrate;
conformally forming a protective layer on top surfaces and sidewalls of the plurality of stack structures;
forming a conductive layer on the substrate to fill in spaces between the plurality of stack structures;
performing a first patterning process to pattern the conductive layer into a plurality of conductive strips, wherein the plurality of conductive strips comprise a first conductive strip and a second conductive strip;
performing a second patterning process to pattern the first conductive strip into a plurality of conductive pillars; and
performing a replacement process to replace the second conductive strip and the plurality of conductive pillars by a plurality of contact plugs.