US 11,056,551 B2
Display device
Hye-Hyang Park, Yongin-si (KR); Joo-Hee Jeon, Anyang-si (KR); Seung-Ho Jung, Hwaseong-si (KR); Chaun-Gi Choi, Suwon-si (KR); Hyeon-Sik Kim, Yongin-si (KR); Hui-Won Yang, Seoul (KR); and Eun-Young Lee, Suwon-si (KR)
Assigned to Samsung Display Co., . Ltd.
Filed by Samsung Display Co., Ltd., Yongin-Si (KR)
Filed on Aug. 29, 2019, as Appl. No. 16/556,166.
Application 16/556,166 is a continuation of application No. 15/416,653, filed on Jan. 26, 2017, granted, now 10,418,431.
Claims priority of application No. 10-2016-0011355 (KR), filed on Jan. 29, 2016.
Prior Publication US 2019/0386084 A1, Dec. 19, 2019
Int. Cl. H01L 27/32 (2006.01); H01L 51/00 (2006.01); H01L 51/52 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/51 (2006.01)
CPC H01L 27/3262 (2013.01) [H01L 27/326 (2013.01); H01L 27/3211 (2013.01); H01L 27/3246 (2013.01); H01L 27/3248 (2013.01); H01L 27/3258 (2013.01); H01L 51/0096 (2013.01); H01L 51/5253 (2013.01); H01L 51/5256 (2013.01); H01L 51/5275 (2013.01); H01L 27/1222 (2013.01); H01L 27/1248 (2013.01); H01L 29/513 (2013.01); H01L 29/78645 (2013.01); H01L 29/78666 (2013.01); H01L 29/78675 (2013.01); H01L 51/0097 (2013.01); H01L 2251/301 (2013.01)] 22 Claims
OG exemplary drawing
 
1. An organic light emitting display (OLED) device, comprising:
a substrate including a sub-pixel region and a transparent region;
a buffer layer in the sub-pixel region and the transparent region on the substrate, the buffer layer having a first refractive index;
a first gate insulation layer in the sub-pixel region and the transparent region on the buffer layer, the first gate insulation layer including the same material with the buffer layer;
an active layer between the buffer layer and the first gate insulation layer;
a first gate electrode on the first gate insulation layer under which the active layer is disposed;
a first insulating interlayer in the sub-pixel region and the transparent region on the first gate insulation layer, the first insulating interlayer having a second refractive index that is greater than the first refractive index;
a second gate insulation layer in the sub-pixel region and the transparent region between the first gate insulation layer and the first insulating interlayer;
a second gate electrode interposed between the second gate insulation layer and the first insulating interlayer;
source and drain electrodes on the first insulating interlayer, the source and drain electrodes defining a semiconductor element together with the active layer and the first gate electrode; and
a pixel structure on the semiconductor element, the pixel structure being electrically connected to the semiconductor element.