US 11,056,527 B2
Metal oxide interface passivation for photon counting devices
Jinbo Cao, Rexford, NY (US); Jongwoo Choi, Niskayuna, NY (US); and Aharon Yakimov, Niskayuna, NY (US)
Assigned to GENERAL ELECTRIC COMPANY, Schenectady, NY (US)
Filed by General Electric Company, Schenectady, NY (US)
Filed on May 4, 2016, as Appl. No. 15/145,825.
Prior Publication US 2017/0323922 A1, Nov. 9, 2017
Int. Cl. H01L 27/146 (2006.01); H01L 31/0216 (2014.01); H01L 31/115 (2006.01); G01T 1/24 (2006.01); H01L 31/0224 (2006.01)
CPC H01L 27/14659 (2013.01) [G01T 1/24 (2013.01); H01L 27/1462 (2013.01); H01L 27/14685 (2013.01); H01L 27/14696 (2013.01); H01L 27/14698 (2013.01); H01L 31/0224 (2013.01); H01L 31/02161 (2013.01); H01L 31/115 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A photon counting device comprising:
a direct mode detector comprising;
a CdMgTeSe semiconductor layer located between a cathode electrode and an anode electrode; and a metal oxide layer comprising a metal oxide, wherein
the metal oxide comprises a metal that is different from metals present in the CdMgTeSe semiconductor layer.
 
13. A method for fabricating a direct mode detector comprising a CdMgTeSe semiconductor layer, the method comprising depositing a metal oxide layer comprising a metal oxide, between a cathode electrode and the semiconductor layer of an X-ray detector, wherein
the metal oxide comprises a metal that is different from metals present in the CdMgTeSe semiconductor layer; and
a thickness of the metal oxide layer ranges from about 0.1 nm to about 5 nm.