US 11,056,520 B2
Imaging device and imaging system
Yusuke Onuki, Fujisawa (JP); Mahito Shinohara, Tokyo (JP); Hajime Ikeda, Yokohama (JP); Takafumi Miki, Yokohama (JP); and Hiroshi Sekine, Kawasaki (JP)
Assigned to CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Dec. 9, 2019, as Appl. No. 16/708,079.
Application 16/708,079 is a continuation of application No. 16/259,451, filed on Jan. 28, 2019, granted, now 10,535,688.
Claims priority of application No. JP2018-024935 (JP), filed on Feb. 15, 2018.
Prior Publication US 2020/0111828 A1, Apr. 9, 2020
Int. Cl. H01L 27/146 (2006.01); H04N 5/3745 (2011.01); H04N 5/378 (2011.01); H04N 5/369 (2011.01); H04N 5/359 (2011.01); H04N 5/341 (2011.01); H04N 5/355 (2011.01)
CPC H01L 27/14612 (2013.01) [H01L 27/14643 (2013.01); H01L 27/14656 (2013.01); H01L 27/14689 (2013.01); H04N 5/341 (2013.01); H04N 5/3597 (2013.01); H04N 5/35572 (2013.01); H04N 5/36961 (2018.08); H04N 5/378 (2013.01); H04N 5/37452 (2013.01); H04N 5/37455 (2013.01)] 10 Claims
OG exemplary drawing
 
1. An imaging device comprising:
a plurality of pixels each including:
a photoelectric converter that generates charges by photoelectric conversion;
a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion;
a second transfer transistor that transfers charges of the first holding portion to a second holding portion; and
an amplifier unit having an input node connected to the second holding portion,
wherein the first transfer transistor is configured to form a potential well for charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state, and
wherein a saturation charge amount QPD_SAT of the photoelectric converter and a maximum charge amount QGS that can be held in the potential well are in a relationship of:
QPD_SAT<QGS.