US 11,056,511 B2
Display apparatus and method of manufacturing the same
Yunmo Chung, Yongin-si (KR); Daewoo Lee, Yongin-si (KR); Ilhun Seo, Yongin-si (KR); and Hojin Yoon, Yongin-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Apr. 10, 2020, as Appl. No. 16/846,240.
Application 16/846,240 is a continuation of application No. 16/257,693, filed on Jan. 25, 2019, granted, now 10,629,626.
Claims priority of application No. 10-2018-0009607 (KR), filed on Jan. 25, 2018.
Prior Publication US 2020/0243571 A1, Jul. 30, 2020
Int. Cl. H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 27/146 (2006.01)
CPC H01L 27/1233 (2013.01) [H01L 27/124 (2013.01); H01L 27/1248 (2013.01); H01L 27/1255 (2013.01); H01L 27/1259 (2013.01); H01L 27/14603 (2013.01); H01L 27/3262 (2013.01); H01L 27/3272 (2013.01)] 17 Claims
OG exemplary drawing
 
12. A display apparatus comprising:
a first thin film transistor disposed on a substrate and comprising a first gate electrode and a first active layer;
a second thin film transistor disposed on the first thin film transistor and comprising a second gate electrode and a second active layer;
a conductive layer disposed between the first thin film transistor and the second thin film transistor;
a first capacitor disposed on the second thin film transistor and at least partially overlapping the second active layer;
a second capacitor comprising a lower electrode and an upper electrode; and
at least one electrode electrically connecting the first active layer and the second active layer,
wherein the lower electrode of the second capacitor is the first gate electrode of the first thin film transistor, and the upper electrode of the second capacitor is the conductive layer.