US 11,056,488 B2
Metal-oxide-semiconductor device
Kao-Way Tu, New Taipei (TW); and Yuan-Shun Chang, New Taipei (TW)
Assigned to Force MOS Technology Co., Ltd., New Taipei (TW)
Filed by Force MOS Technology Co., Ltd., New Taipei (TW)
Filed on Oct. 14, 2019, as Appl. No. 16/600,738.
Claims priority of application No. 108104238 (TW), filed on Feb. 1, 2019.
Prior Publication US 2020/0251468 A1, Aug. 6, 2020
Int. Cl. H01L 27/088 (2006.01); H01L 23/535 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01)
CPC H01L 27/088 (2013.01) [H01L 23/535 (2013.01); H01L 29/41725 (2013.01); H01L 29/42372 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A MOS device, comprising:
a heavily doped substrate;
an epitaxial layer, formed on the heavily doped substrate;
an open, defined in the epitaxial layer to expose the heavily doped substrate;
a plurality of MOS units, formed in the epitaxial layer; and
a metal pattern layer, comprising:
a source metal pattern, formed on the epitaxial layer;
a gate metal pattern, formed on the epitaxial layer; and
a drain metal pattern, deposited in the open and extended from the heavily doped substrate upward over the epitaxial layer,
wherein the open is located at a corner of the epitaxial layer.