US 11,056,480 B2
Method of forming a TVS semiconductor device
Yupeng Chen, San Jose, CA (US); Steven M. Etter, Phoenix, AZ (US); and Umesh Sharma, San Jose, CA (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Dec. 5, 2019, as Appl. No. 16/704,365.
Application 16/704,365 is a continuation of application No. 15/684,556, filed on Aug. 23, 2017, granted, now 10,535,648.
Prior Publication US 2020/0111777 A1, Apr. 9, 2020
Int. Cl. H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/732 (2006.01); H01L 29/861 (2006.01); H01L 29/08 (2006.01); H01L 23/535 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01)
CPC H01L 27/0248 (2013.01) [H01L 23/535 (2013.01); H01L 27/0255 (2013.01); H01L 27/0259 (2013.01); H01L 27/0664 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/66136 (2013.01); H01L 29/66234 (2013.01); H01L 29/7322 (2013.01); H01L 29/861 (2013.01); H01L 29/8611 (2013.01); H01L 29/0638 (2013.01); H01L 29/0649 (2013.01); H01L 29/0692 (2013.01); H01L 29/1004 (2013.01); H01L 29/732 (2013.01); H01L 29/8613 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of forming a transient voltage suppressor (TVS) semiconductor device comprising:
forming a P-N diode connected in parallel between a collector and an emitter of a bipolar transistor wherein a base of the bipolar transistor is floating and not directly connected externally to the bipolar transistor; and
forming a thickness of a first current carrying electrode of the P-N diode to be greater than a total thickness of the base of the bipolar transistor wherein a reverse breakdown voltage of the P-N diode is to be greater than an open base collector-to-emitter breakdown voltage of the bipolar transistor (BVeco).