US 11,056,434 B2
Semiconductor device having specified p-type dopant concentration profile
Yung-Chung Pan, Hsinchu (TW); Chang-Yu Tsai, Hsinchu (TW); Ching-Chung Hu, Hsinchu (TW); Ming-Pao Chen, Hsinchu (TW); Chi Shen, Hsinchu (TW); and Wei-Chieh Lien, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Jan. 19, 2018, as Appl. No. 15/875,735.
Claims priority of provisional application 62/450,824, filed on Jan. 26, 2017.
Prior Publication US 2018/0211919 A1, Jul. 26, 2018
Int. Cl. H01L 33/04 (2010.01); H01L 33/14 (2010.01); H01L 33/26 (2010.01); H01L 23/532 (2006.01); H01L 33/12 (2010.01); H01L 33/28 (2010.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 31/0304 (2006.01); H01L 29/205 (2006.01); H01L 33/30 (2010.01)
CPC H01L 23/53223 (2013.01) [H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02579 (2013.01); H01L 21/28575 (2013.01); H01L 21/76846 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/14 (2013.01); H01L 33/145 (2013.01); H01L 33/28 (2013.01); H01L 33/32 (2013.01); H01L 29/205 (2013.01); H01L 31/03042 (2013.01); H01L 31/03046 (2013.01); H01L 33/305 (2013.01); H01L 33/325 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first semiconductor structure;
a second semiconductor structure on the first semiconductor structure;
an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface;
an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region comprises a first electron blocking layer having a band gap greater than the band gap of one of the barrier layers;
a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region;
a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies in the electron blocking region and at a distance of between 15 nm and 60 nm from the upper surface of the active region; and
a second electron blocking layer between the active region and the electron blocking region and on a side of the first aluminum-containing layer opposite to the electron blocking region,
wherein the first aluminum-containing layer comprises a thickness between 0.5 nm and 15 nm both inclusive, and
wherein the second electron blocking layer has a band gap greater than the band gap of one of the barrier layers.