US 11,056,429 B2
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
Benjamin David Briggs, Waterford, NY (US); Lawrence A. Clevenger, Saratoga Springs, NY (US); Bartlet H. Deprospo, Goshen, NY (US); Huai Huang, Saratoga, NY (US); Christopher J. Penny, Saratoga Springs, NY (US); and Michael Rizzolo, Delmar, NY (US)
Assigned to Tessera, Inc., San Jose, CA (US)
Filed by Tessera, Inc., San Jose, CA (US)
Filed on Mar. 12, 2020, as Appl. No. 16/817,491.
Application 16/421,587 is a division of application No. 16/049,442, filed on Jul. 30, 2018, granted, now 10,366,952, issued on Jul. 30, 2019.
Application 15/908,377 is a division of application No. 15/199,321, filed on Jun. 30, 2016, granted, now 9,997,451, issued on Jun. 12, 2018.
Application 16/817,491 is a continuation of application No. 16/421,587, filed on May 24, 2019, granted, now 10,629,529.
Application 16/049,442 is a continuation of application No. 15/908,377, filed on Feb. 28, 2018, granted, now 10,109,579, issued on Oct. 23, 2018.
Prior Publication US 2020/0388568 A1, Dec. 10, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/7682 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76819 (2013.01); H01L 21/76829 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/5329 (2013.01); H01L 23/53219 (2013.01); H01L 23/53223 (2013.01); H01L 23/53233 (2013.01); H01L 23/53238 (2013.01); H01L 21/76825 (2013.01); H01L 21/76828 (2013.01); H01L 21/76832 (2013.01); H01L 21/76883 (2013.01); H01L 23/53252 (2013.01); H01L 2221/1047 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
forming a pore-filled porous dielectric layer including a recessed portion;
forming a conductive layer in the recessed portion;
forming a cap layer on the pore-filled porous dielectric layer and on the conductive layer; and
removing at least a portion of the cap layer to expose an upper surface of the pore-filled porous dielectric layer through a gap in the cap layer to provide an exposed upper surface of the pore-filled porous dielectric layer.