US 11,056,428 B2
Semiconductor device extension insulation
Hung-Chih Yu, Hsinchu (TW); and Chien-Mao Chen, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jan. 9, 2020, as Appl. No. 16/738,936.
Application 16/738,936 is a division of application No. 15/664,990, filed on Jul. 31, 2017, granted, now 10,535,598.
Prior Publication US 2020/0144181 A1, May 7, 2020
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 29/78 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/76843 (2013.01); H01L 21/76879 (2013.01); H01L 21/76883 (2013.01); H01L 21/76888 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 23/53266 (2013.01); H01L 29/78 (2013.01)] 15 Claims
OG exemplary drawing
 
15. A semiconductor device, comprising:
a substrate having a plurality of conductive features formed therein;
an isolation layer disposed above the substrate;
a plurality of vertical conductive structures extending through the isolation layer;
an insulated extension disposed horizontally between a first vertical conductive structure and a second vertical conductive structure of the plurality of vertical conductive structures, wherein the insulated extension comprises an insulation depth extending into a portion of the first vertical conductive structure and a portion of the isolation layer between the first vertical conductive structure and the second vertical conductive structure, wherein the first and second vertical conductive structures are conductively coupled to respective ones of the plurality of conductive features;
a first intermediate layer disposed between the substrate and the isolation layer;
first and second intermediate horizontal conductive structures formed in the first intermediate layer, wherein the first and second intermediate horizontal conductive structures are conductively coupled to the first and second vertical conductive structures, respectively;
a second intermediate layer disposed between the first intermediate layer and the substrate; and
third and fourth vertical conductive structures formed in the second intermediate layer, wherein the third and fourth vertical conductive structures are conductively coupled to the first and second intermediate horizontal conductive structures,
wherein the insulated extension is structurally coupled to the first vertical conductive structure and is separated from the second vertical conductive structure.