US 11,056,426 B2
Metallization interconnect structure formation
Yann Mignot, Slingerlands, NY (US); Hosadurga Shobha, Niskayuna, NY (US); Hsueh-Chung Chen, Cohoes, NY (US); and Chih-Chao Yang, Glenmont, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on May 29, 2019, as Appl. No. 16/425,524.
Prior Publication US 2020/0381354 A1, Dec. 3, 2020
Int. Cl. H01L 21/4763 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/76807 (2013.01); H01L 21/76897 (2013.01); H01L 23/528 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating a metallic interconnect of a semiconductor device, comprising:
forming a first metallization layer of the semiconductor device, the first metallization layer comprising a first dielectric layer, a first metallic layer formed in the first dielectric layer and a first capping layer formed on the first dielectric layer and the first metallic layer;
forming a second metallization layer of the semiconductor device, the second metallization layer comprising a second dielectric layer, a second metallic layer formed in the second dielectric layer and a second capping layer formed on the second dielectric layer and the second metallic layer;
etching a channel in the second capping layer, second dielectric layer, and first capping layer, the channel exposing a portion of the first metallic layer and a portion of the second metallic layer;
forming a metallic interconnect structure in the channel, the metallic interconnect structure being formed in contact with the exposed portion of the first metallic layer and the exposed portion of the second metallic layer;
planarizing the metallic interconnect structure and the second capping layer to a surface of the second metallic layer, the planarizing removing the second capping layer; and
forming a third capping layer over the second dielectric layer, second metallic layer, and metallic interconnect structure.