US 11,056,420 B2
Pressing-type semiconductor power device package
Yunhwa Choi, Bucheon-si (KR); Jeonghun Cho, Goyang-si (KR); and Jungtae Cho, Seoul (KR)
Assigned to JMJ KOREA CO., LTD., Bucheon-si (KR)
Filed by JMJ KOREA CO., LTD., Bucheon-si (KR)
Filed on Dec. 20, 2018, as Appl. No. 16/226,937.
Claims priority of application No. 10-2018-0019340 (KR), filed on Feb. 19, 2018.
Prior Publication US 2019/0259686 A1, Aug. 22, 2019
Int. Cl. H01L 23/492 (2006.01); H01L 23/32 (2006.01)
CPC H01L 23/492 (2013.01) [H01L 23/32 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor power device package, comprising:
at least one upper metal plate located above a device; and
at least one lower metal plate located below the device;
wherein the device is a transistor chip, the at least one upper metal plate comprises, sequentially from a top thereof, a first metal plate responsible for a gate and a second metal plate responsible for an emitter, and the at least one lower metal plate comprises a third metal plate responsible for a collector,
wherein one or more coupling holes are formed in each of the at least one upper and lower metal plates, and the at least one upper and lower metal plates are fastened and structurally connected by pressing members passing through the coupling holes, so that electrical connections are established among the device and the at least one upper and lower metal plates.