US 11,056,418 B2
Semiconductor microcooler
Donald F. Canaperi, Bridgewater, CT (US); Daniel A. Corliss, Waterford, NY (US); Dario Goldfarb, Dobbs Ferry, NY (US); Dinesh Gupta, Hopewell Junction, NY (US); Fee Li Lie, Albany, NY (US); and Kamal K. Sikka, Poughkeepsie, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Dec. 13, 2019, as Appl. No. 16/713,611.
Application 16/713,611 is a continuation of application No. 16/102,252, filed on Aug. 13, 2018, granted, now 10,553,522.
Prior Publication US 2020/0161216 A1, May 21, 2020
Int. Cl. H01L 23/473 (2006.01); H01L 23/427 (2006.01); F28F 3/12 (2006.01); H01L 23/373 (2006.01); F28F 3/04 (2006.01)
CPC H01L 23/473 (2013.01) [F28F 3/048 (2013.01); F28F 3/12 (2013.01); H01L 23/373 (2013.01); H01L 23/427 (2013.01); F28F 2260/02 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A heat transfer method comprising:
causing a flow of liquid coolant through a plurality of fin trenches of a stacked semiconductor microcooler, the stacked semiconductor microcooler comprising:
a first semiconductor microcooler comprising a plurality of first silicon fins and a plurality of first fin trenches, wherein each first fin trench separates adjacent first silicon fins, a first copper layer upon sidewalls of each of the plurality of first silicon fins, and a bonding layer upon a respective upper surface of each of the first plurality of silicon fins;
a second semiconductor microcooler comprising a plurality of second silicon fins and a plurality of second fin trenches, wherein each second fin trench separates adjacent second silicon fins, and a second copper layer upon sidewalls of each of the plurality of second silicon fins;
wherein the bonding layer connects the respective upper surface of each of the first plurality of silicon fins with a respective upper surface of each of the second plurality of silicon fins.