US 11,056,402 B2
Integrated circuit chip and manufacturing method therefor, and gate drive circuit
Lihui Gu, Wuxi New District (CN); Sen Zhang, Wuxi New District (CN); and Congming Qi, Wuxi New District (CN)
Assigned to CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi New District (CN)
Appl. No. 16/643,170
Filed by CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu (CN)
PCT Filed Aug. 31, 2018, PCT No. PCT/CN2018/103620
§ 371(c)(1), (2) Date Feb. 28, 2020,
PCT Pub. No. WO2019/042429, PCT Pub. Date Mar. 7, 2019.
Claims priority of application No. 201710779965.9 (CN), filed on Sep. 1, 2017.
Prior Publication US 2020/0258782 A1, Aug. 13, 2020
Int. Cl. H01L 21/8234 (2006.01); H01L 29/76 (2006.01); H01L 21/8249 (2006.01); H01L 27/06 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01)
CPC H01L 21/8249 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823493 (2013.01); H01L 27/0255 (2013.01); H01L 27/0259 (2013.01); H01L 27/06 (2013.01); H01L 29/739 (2013.01); H01L 29/78 (2013.01); H01L 29/7835 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An integrated circuit chip, comprising:
a semiconductor substrate, in which a high-voltage island for manufacturing a high-voltage gate driving circuit is formed;
a high-voltage junction terminal surrounding the high-voltage island, the high-voltage junction terminal including a depletion mode MOS formed around the high voltage island, a gate and a drain of the depletion mode MOS being short-circuited, and a source of the depletion mode MOS being connected to a high-side power source terminal; and
a bipolar transistor, a collector and a base of the bipolar transistor being short-circuited, the collector of the bipolar transistor being connected to a low-side power source terminal, and an emitter of the bipolar transistor being connected to the gate of the depletion mode MOS.