US 11,056,401 B2
Semiconductor device and method for manufacturing the same
I-Sheng Chen, Taipei (TW); Tzu-Chiang Chen, Hsinchu (TW); Cheng-Hsien Wu, Hsinchu (TW); Chih-Chieh Yeh, Taipei (TW); and Chih-Sheng Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Dec. 2, 2019, as Appl. No. 16/700,227.
Application 16/700,227 is a continuation of application No. 16/234,916, filed on Dec. 28, 2018, granted, now 10,504,796.
Application 16/234,916 is a continuation of application No. 15/632,449, filed on Jun. 26, 2017, granted, now 10,170,374, issued on Jan. 1, 2019.
Claims priority of provisional application 62/475,341, filed on Mar. 23, 2017.
Prior Publication US 2020/0105624 A1, Apr. 2, 2020
Int. Cl. H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/823857 (2013.01) [H01L 21/02603 (2013.01); H01L 21/823807 (2013.01); H01L 21/823828 (2013.01); H01L 21/823885 (2013.01); H01L 27/092 (2013.01); H01L 29/0669 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
first nanostructures over a substrate;
a first source/drain feature adjoining the first nanostructures;
a first multilayer work function structure surrounding the first nanostructures, comprising:
a first middle dielectric layer around the first nanostructures; and
a first metal layer around and in contact with the first middle dielectric layer;
second nanostructures over the substrate;
a second source/drain feature adjoining the second nanostructures; and
a second multilayer work function structure surrounding the second nanostructures, comprising:
a second middle dielectric layer around the second nanostructures, wherein the first middle dielectric layer and the second middle dielectric layer are made of dielectric materials; and
a second metal layer around and in contact with the second middle dielectric layer, wherein the second metal layer and the first metal layer are made of a same metal material.