US 11,056,399 B2
Source and drain EPI protective spacer during single diffusion break formation
Yao Yao, Albany, NY (US); Andrew M. Greene, Slingerlands, NY (US); Veeraraghavan S. Basker, Schenectady, NY (US); Kangguo Cheng, Schenectady, NY (US); Zhenxing Bi, Niskayuna, NY (US); and Ruilong Xie, Niskayuna, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed on Apr. 10, 2019, as Appl. No. 16/380,487.
Prior Publication US 2020/0328121 A1, Oct. 15, 2020
Int. Cl. H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/823481 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
1. A method for forming single diffusion break (SDB) without damaging source and drain epitaxial growth regions, the method comprising:
forming the source and drain epitaxial growth regions between sacrificial gates, the sacrificial gates formed over a plurality of fins, wherein a top surface of the source and drain epitaxial growth regions extends above a bottom surface of the sacrificial gates;
depositing an interlayer dielectric (ILD) over the source and drain epitaxial growth regions;
performing SDB patterning;
removing at least one of the sacrificial gates to expose the plurality of fins such that top surfaces of shallow trench isolation (STI) regions are exposed, the STI regions formed between the plurality of fins;
recessing the plurality of fins in a first etch process to create a first opening, the recessing resulting in remaining fin portions, and the first etch process completed once the top surfaces of the STI regions are reached;
forming inner spacers within the first opening;
removing the remaining fin portions in a second etch process to create a second opening, dimensions of the second opening defined by the inner spacers, the second etch process completed once bottom surfaces of the STI regions are reached; and
laterally etching the second opening in a third etch process to increase SDB width.