US 11,056,387 B2
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
Jifeng Zhu, Hubei (CN); Jun Chen, Hubei (CN); Si Ping Hu, Hubei (CN); and Zhenyu Lu, Hubei (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Jan. 17, 2020, as Appl. No. 16/745,617.
Application 16/745,617 is a division of application No. 16/046,248, filed on Jul. 26, 2018, granted, now 10,651,087.
Application 16/046,248 is a continuation of application No. PCT/CN2018/090457, filed on Jun. 8, 2018.
Claims priority of application No. 201710774763.5 (CN), filed on Aug. 31, 2017.
Prior Publication US 2020/0152515 A1, May 14, 2020
Int. Cl. H01L 21/768 (2006.01); H01L 21/762 (2006.01); H01L 25/18 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 27/105 (2006.01); H01L 27/06 (2006.01)
CPC H01L 21/76898 (2013.01) [H01L 21/76224 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 25/18 (2013.01); H01L 27/0688 (2013.01); H01L 27/1052 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a 3D integrated wiring structure, comprising:
forming a dielectric layer in a first substrate;
forming a semiconductor structure over a front side of the first substrate, wherein the semiconductor structure comprises a first conductive layer above the dielectric layer and a first conductive contact, wherein a first end of the first conductive contact connects to the first conductive layer and a second end of the first conductive contact extends through a front side of the dielectric layer; and
forming a second conductive contact at a backside of the first substrate, wherein
the second conductive contact extends through a backside of the dielectric layer and connects to the second end of the first conductive contact;
the backside and the front side of the first substrate are located on opposite sides of the first substrate; and
the backside and the front side of the dielectric layer are located on opposite sides of the dielectric layer.