US 11,056,355 B2
Semiconductor device and method of fabricating the same
Byoungdeog Choi, Suwon-si (KR); and Jangseop Kim, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggl-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 30, 2019, as Appl. No. 16/399,098.
Claims priority of application No. 10-2018-0118213 (KR), filed on Oct. 4, 2018.
Prior Publication US 2020/0111684 A1, Apr. 9, 2020
Int. Cl. H01L 21/56 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/565 (2013.01) [H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01)] 14 Claims
OG exemplary drawing
1. A method of fabricating a semiconductor device, the method comprising:
forming, on a substrate, a mold structure including a mold layer, a buffer layer, and a support layer, the buffer layer including a lower portion adjacent to the mold layer, an upper portion adjacent to the support layer and a middle portion between the lower portion and upper portion with a nitrogen content of the middle portion of the buffer layer increasing in a direction approaching the upper portion and an oxygen content of the middle portion increasing in a direction approaching the lower portion such that the lower portion includes silicon oxide, the upper portion includes silicon nitride and the middle portion includes silicon oxynitride;
performing an anisotropic etching process on the mold structure to form a plurality of through holes in the mold structure;
forming a plurality of bottom electrodes in respective ones of the plurality of through holes;
forming a dielectric layer conformally covering a top surface and a sidewall of each of the plurality of the bottom electrodes; and
forming a top electrode covering the dielectric layer and filling spaces between the plurality of the bottom electrodes.