US 11,056,352 B2
Magnetic slurry for highly efficient CMP
Yen-Ting Chen, Taichung (TW); Chun-Hao Kung, Hsinchu (TW); Tung-Kai Chen, New Taipei (TW); Hui-Chi Huang, Zhubei (TW); and Kei-Wei Chen, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Dec. 3, 2018, as Appl. No. 16/207,802.
Claims priority of provisional application 62/712,654, filed on Jul. 31, 2018.
Prior Publication US 2020/0043747 A1, Feb. 6, 2020
Int. Cl. H01L 21/321 (2006.01); C09K 3/14 (2006.01); B24B 57/02 (2006.01); B24B 37/04 (2012.01); B01F 13/08 (2006.01)
CPC H01L 21/3212 (2013.01) [B01F 13/0818 (2013.01); B24B 37/04 (2013.01); B24B 57/02 (2013.01); C09K 3/1427 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A chemical-mechanical polishing (CMP) system, comprising:
a head;
a polishing pad;
a first magnet disposed over the polishing pad, the first magnet configured to apply a first magnetic field to a slurry disposed over the polishing pad, and the slurry comprising magnetizable abrasives;
a second magnet disposed below the polishing pad, the second magnet being directly below the head; and
a third magnet disposed below the polishing pad, the third magnet being laterally displaced from the second magnet and the head.