US 11,056,325 B2
Methods and apparatus for substrate edge uniformity
Thanh X. Nguyen, Fremont, CA (US); Alexander Jansen, Sunnyvale, CA (US); Yana Cheng, San Jose, CA (US); Randal Schmieding, Saratoga, CA (US); Yong Cao, San Jose, CA (US); Xianmin Tang, San Jose, CA (US); and William Johanson, Gilroy, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed on Dec. 11, 2018, as Appl. No. 16/215,769.
Claims priority of provisional application 62/607,989, filed on Dec. 20, 2017.
Prior Publication US 2019/0189407 A1, Jun. 20, 2019
Int. Cl. H01J 37/34 (2006.01); C23C 14/34 (2006.01); C23C 14/54 (2006.01); H01J 37/32 (2006.01)
CPC H01J 37/347 (2013.01) [C23C 14/34 (2013.01); C23C 14/3492 (2013.01); C23C 14/545 (2013.01); H01J 37/32651 (2013.01); H01J 37/3447 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of controlling substrate edge uniformity in a semiconductor process chamber, comprising:
depositing a first material on a first substrate disposed on a substrate support held in a first position relative to a cover ring disposed about the substrate support, the first position providing a shadow angle of the cover ring to the first substrate; and
depositing the first material on a subsequent, second substrate with the substrate support in a second position relative to the cover ring, different than the first position, the second position maintaining the shadow angle of the cover ring for the second substrate, compensating for deposition on a top surface of the cover ring.