US 11,056,204 B2
Memory device and method of operating the same
Hyung Jin Choi, Ulsan (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on May 8, 2020, as Appl. No. 16/870,606.
Claims priority of application No. 10-2019-0158811 (KR), filed on Dec. 3, 2019.
Prior Publication US 2021/0166772 A1, Jun. 3, 2021
Int. Cl. G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01)
CPC G11C 16/3459 (2013.01) [G11C 11/5628 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 2211/5621 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of operating a memory device including a plurality of memory cells each having a target programmed state among a plurality of programmed states, the method comprising:
performing at least one program loop corresponding to at least one of the programmed states other than a most significant programmed state among the plurality of programmed states; and
applying a program pulse corresponding to the most significant programmed state to a word line,
wherein the at least one program loop includes applying a program voltage to a word line coupled in common to the plurality of memory cells, and selectively performing a verify operation of determining whether a threshold voltage of each of the plurality of memory cells exceeds a verify voltage.