US 11,056,194 B2
Method of erasing data in nonvolatile memory device, nonvolatile memory device performing the same and memory system including the same
Won-Bo Shim, Seoul (KR); Sang-Wan Nam, Hwaseong-si (KR); and Ji-Ho Cho, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd.
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 29, 2020, as Appl. No. 17/36,387.
Application 17/036,387 is a continuation of application No. 16/845,387, filed on Apr. 10, 2020, granted, now 10,825,532.
Application 16/845,387 is a continuation of application No. 16/164,845, filed on Oct. 19, 2018, granted, now 10,658,043, issued on May 19, 2020.
Claims priority of application No. 10-2017-0181410 (KR), filed on Dec. 27, 2017.
Prior Publication US 2021/0012840 A1, Jan. 14, 2021
Int. Cl. G11C 16/16 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 7/10 (2006.01); G11C 16/04 (2006.01); G11C 8/14 (2006.01)
CPC G11C 16/16 (2013.01) [G11C 7/1039 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 8/14 (2013.01); G11C 2216/16 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A nonvolatile memory device comprising:
a memory cell region including a first metal pad;
a peripheral circuit region including a second metal pad and vertically connected to the memory cell region by the first metal pad and the second metal pad;
a memory block in the memory cell region including memory cells stacked in a direction intersecting a substrate, the memory block being divided into a plurality of sub-blocks configured to be erased independently;
a row decoder in the peripheral circuit region configured to select the memory block by units of a sub-block; and
a control circuit in the peripheral circuit region configured to receive a data erase command for a selected sub-block among the plurality of sub-blocks, to perform a data read operation on at least one victim sub-block among the plurality of sub-blocks in response to the data erase command, to selectively perform a soft program operation on the at least one victim sub-block based on a result of the data read operation, and to perform a data erase operation on the selected sub-block after the data read operation is performed and the soft program operation is selectively performed.