US 11,056,181 B2
Strap cell design for static random access memory (SRAM) array
Chia-Hao Pao, Kaohsiung (TW); Kian-Long Lim, Hsinchu (TW); Feng-Ming Chang, Zhubei (TW); and Lien-Jung Hung, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 30, 2020, as Appl. No. 17/107,517.
Application 16/921,156 is a division of application No. 16/725,409, filed on Dec. 23, 2019, granted, now 10,714,168, issued on Jul. 14, 2020.
Application 16/725,409 is a division of application No. 15/962,409, filed on Apr. 25, 2018, granted, now 10,515,687, issued on Dec. 24, 2019.
Application 17/107,517 is a continuation of application No. 16/921,156, filed on Jul. 6, 2020, granted, now 10,854,279.
Claims priority of provisional application 62/564,393, filed on Sep. 28, 2017.
Prior Publication US 2021/0082493 A1, Mar. 18, 2021
Int. Cl. G11C 11/412 (2006.01); H01L 27/11 (2006.01); H01L 27/02 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01)
CPC G11C 11/412 (2013.01) [H01L 27/0207 (2013.01); H01L 27/1104 (2013.01); H01L 27/1116 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A static random access memory (SRAM) array, comprising:
a first bit cell array and a second bit cell array arranged along a first direction;
a strap cell arranged along a second direction and positioned between the first bit cell array and the second bit cell array along the first direction,
wherein the strap cell comprises:
a first P-type well region;
two first N-type well regions;
a second N-type well region, wherein the two first N-type well regions are separated by the first P-type well region in the first direction, and the second N-type well region and one of the two first N-type well regions are separated by the first P-type well region in the second direction; and
a deep N-type well region underlying the two first N-type well regions and the second N-type well region.