US 11,056,136 B2
Third alternative design for magnetic recording assisted by one or two spin hall effect (SHE) layers in the write gap
Wenyu Chen, San Jose, CA (US)
Assigned to Headway Technologies, Inc., Milpitas, CA (US)
Filed by Headway Technologies, Inc., Milpitas, CA (US)
Filed on Jul. 2, 2020, as Appl. No. 16/919,936.
Application 16/919,936 is a division of application No. 16/680,888, filed on Nov. 12, 2019, granted, now 10,748,562.
Prior Publication US 2021/0142823 A1, May 13, 2021
Int. Cl. G11B 5/31 (2006.01); G11B 5/37 (2006.01); G01R 33/09 (2006.01); G11B 5/127 (2006.01)
CPC G11B 5/3146 (2013.01) [G01R 33/093 (2013.01); G11B 5/1278 (2013.01); G11B 5/37 (2013.01); G11B 5/374 (2013.01)] 20 Claims
OG exemplary drawing
1. A Spin Hall Effect (SHE) assisted magnetic recording (SHAMR) structure, comprising:
(a) a main pole (MP) having a MP tip with a front side at an air bearing surface (ABS), and with a local magnetization that is proximate to a MP trailing side and substantially in a direction of a write gap (WG) flux field between the MP tip and a trailing shield and across a WG;
(b) the trailing shield (TS) with a front side at the ABS, and a local magnetization proximate to a bottom surface that faces the MP trailing side, and substantially in a direction of the WG flux field;
(c) a Spin Hall Effect layer (SHE1) formed in the WG, and comprised of a negative Spin Hall Angle (SHA) material; and
(d) a conductor layer made of a non-magnetic metal that contacts SHE1, and wherein the SHE1 is configured to generate a transverse spin transfer torque that tilts one of the local MP magnetization and local TS magnetization to a direction that enhances a MP write field and increases a TS return field, respectively, when a current (Ia) flows from a direct current (dc) source through a first lead to SHE1 and then to the conductor layer before returning to the dc source through a second lead.