US 11,054,742 B2
EUV metallic resist performance enhancement via additives
An-Ren Zi, Hsinchu (TW); Joy Cheng, Taoyuan (TW); and Ching-Yu Chang, Yilang County (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 15, 2018, as Appl. No. 16/9,795.
Prior Publication US 2019/0384173 A1, Dec. 19, 2019
Int. Cl. G03F 7/004 (2006.01)
CPC G03F 7/0048 (2013.01) [G03F 7/0042 (2013.01); G03F 7/0045 (2013.01); G03F 7/0047 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A material, comprising:
a metallic photoresist material for an extreme ultraviolet (EUV) lithography; and
a solvent having a boiling point greater than about 150 degrees Celsius, wherein the solvent has a chemical formula selected from the group consisting of:

OG Complex Work Unit Chemistry
 
8. A method, comprising:
forming a photoresist layer over a wafer, wherein the photoresist layer includes a metallic photoresist material and a photo acid generator; and
performing an extreme ultraviolet (EUV) lithography process using the photoresist layer;
wherein the photo acid generator includes a cation component and an anion component, wherein the cation component has a chemical formula selected from the group consisting of:

OG Complex Work Unit Chemistry
and wherein the anion component has a chemical formula selected from the group consisting of:

OG Complex Work Unit Chemistry
 
17. A method, comprising:
receiving a photoresist that contains metal; and
adding, to the photoresist, a material that includes:
a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, and a photo sensitivity cross-linker, and wherein the solvent has a chemical formula selected from the group consisting of:

OG Complex Work Unit Chemistry