US 11,054,673 B2
Photonic devices
Mohammad Soltani, Belmont, MA (US); and Eduardo M. Chumbes, Andover, MA (US)
Assigned to Raytheon BBN Technologies Corp., Cambridge, MA (US); and Raytheon Company, Waltham, MA (US)
Filed by Raytheon BBN Technologies Corp., Cambridge, MA (US); and Raytheon Company, Waltham, MA (US)
Filed on Jun. 9, 2020, as Appl. No. 16/896,735.
Application 16/896,735 is a division of application No. 16/227,846, filed on Dec. 20, 2018.
Claims priority of provisional application 62/670,273, filed on May 11, 2018.
Prior Publication US 2020/0301175 A1, Sep. 24, 2020
Int. Cl. G01N 21/41 (2006.01); G02F 1/017 (2006.01); H01S 5/125 (2006.01); H01S 5/343 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01)
CPC G02F 1/01716 (2013.01) [G02F 1/01708 (2013.01); H01S 5/125 (2013.01); G02F 2202/108 (2013.01); H01L 29/2003 (2013.01); H01L 29/7783 (2013.01); H01S 5/343 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A photonic device comprising: a Group III-Nitride quantum well electro-optic modulator, the modulator comprising:
a Group III-Nitride quantum well photonic waveguiding layer; and
a cladding layer comprising an Al1-xScxN, where 0<x≤0.45, the cladding layer disposed on the Group III-Nitride quantum well photonic waveguiding layer providing a lower refractive index at the operating wavelength of the photonic device to the Group III-Nitride while also providing a crystalline lattice matching layer to the Group III-Nitride quantum well photonic waveguiding layer.