US 11,054,387 B2
Semiconductor devices with ion-sensitive field effect transistor
Xinshu Cai, Singapore (SG); Shyue Seng Tan, Singapore (SG); and Eng Huat Toh, Singapore (SG)
Assigned to GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed by GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed on Aug. 22, 2019, as Appl. No. 16/548,791.
Prior Publication US 2021/0055256 A1, Feb. 25, 2021
Int. Cl. H01L 21/28 (2006.01); G01N 27/414 (2006.01)
CPC G01N 27/4148 (2013.01) [H01L 21/28026 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
source and drain regions and an isolation structure disposed on the substrate;
a reference gate structure disposed above the substrate;
a floating gate structure extending laterally to include a first portion and a second portion, the first portion being above the isolation structure, wherein the reference gate structure is adjacent to the first portion of the floating gate structure and electrically coupled to the floating gate structure; and
a dielectric layer having a vertical section layer and a horizontal section layer, wherein the vertical section layer is disposed between the reference gate structure and the first portion of the floating gate structure, and the horizontal section layer is disposed between the isolation structure and a bottom surface of the floating gate structure.