US 11,054,312 B2
Radiation-defect mitigation in InAs/GaSb strained-layer superlattice infrared detectors and related methods
Leonid Chernyak, Orlando, FL (US); Robert E. Peale, Winter Park, FL (US); Christopher J. Fredricksen, Orlando, FL (US); and Jonathan Lee, Orlando, FL (US)
Assigned to UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC., Orlando, FL (US)
Filed by UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC., Orlando, FL (US)
Filed on Jan. 29, 2019, as Appl. No. 16/260,861.
Claims priority of provisional application 62/623,132, filed on Jan. 29, 2018.
Prior Publication US 2019/0234803 A1, Aug. 1, 2019
Int. Cl. G01J 5/06 (2006.01); H01L 31/02 (2006.01); H01L 27/146 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 31/109 (2006.01); H01L 31/0304 (2006.01); G01J 5/24 (2006.01); G01J 5/20 (2006.01); G01J 5/00 (2006.01)
CPC G01J 5/06 (2013.01) [G01J 5/24 (2013.01); H01L 27/1462 (2013.01); H01L 27/1465 (2013.01); H01L 27/1469 (2013.01); H01L 27/14694 (2013.01); H01L 31/02019 (2013.01); H01L 31/0304 (2013.01); H01L 31/035236 (2013.01); H01L 31/109 (2013.01); H01L 31/184 (2013.01); H01L 31/186 (2013.01); G01J 2005/0077 (2013.01); G01J 2005/067 (2013.01); G01J 2005/202 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An infrared (IR) sensor device comprising:
an IR image sensor comprising an array of IR sensing pixels;
a readout circuit coupled to said IR image sensor and configured to sense a plurality of sequential images; and
a controller coupled to said readout circuit and configured to cause said readout circuit to apply a plurality of voltage pulses to said IR image sensor between sensing of the plurality of sequential images to mitigate radiation damage to said IR image sensor.