US 11,053,440 B2
Silicon nitride etching composition and method
Steven M. Bilodeau, Fairfield, CT (US); SeongJin Hong, Cheongju-si (KR); Hsing-Chen Wu, Hsinchu (TW); Min-Chieh Yang, Hsinchu (TW); and Emanuel I. Cooper, Scarsdale, NY (US)
Assigned to ENTEGRIS, INC., Billerica, MA (US)
Filed by ENTEGRIS, INC., Billerica, MA (US)
Filed on Nov. 12, 2019, as Appl. No. 16/681,449.
Claims priority of provisional application 62/767,904, filed on Nov. 15, 2018.
Prior Publication US 2020/0157423 A1, May 21, 2020
Int. Cl. C09K 13/06 (2006.01); H01L 21/311 (2006.01)
CPC C09K 13/06 (2013.01) [H01L 21/31111 (2013.01)] 20 Claims
OG exemplary drawing
1. A composition consisting of:
(a) phosphoric acid;
(b) at least one silane chosen from (i) alkylamino alkoxysilanes and (ii) alkylamino hydroxyl silanes, wherein said silane possesses at least one moiety chosen from alkoxy, hydroxyl, and fluoro;
(c) a solvent comprising water;
and optionally
(d) a fluoride compound, provided that the fluoride compound is other than hexafluoro silicic acid;
(e) an alkyl amine or phosphate salt thereof
(f) a surfactant,
(g) a carboxylic acid compound, or
(h) a dissolved silicate.