US 11,052,348 B2
Method for removing boron
Ta-Ching Hsiao, Zhudong Township (TW); Chu-Pi Jeng, Hsinchu (TW); Kuo-Lun Huang, Hsinchu (TW); Mu-Hsi Sung, Hsinchu (TW); Keng-Yang Chen, Zhudong Township (TW); and Li-Duan Tsai, Hsinchu (TW)
Assigned to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu (TW)
Filed by INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu (TW)
Filed on Dec. 26, 2017, as Appl. No. 15/854,375.
Claims priority of application No. 106142908 (TW), filed on Dec. 7, 2017.
Prior Publication US 2019/0176085 A1, Jun. 13, 2019
Int. Cl. B01D 53/46 (2006.01); C01B 32/984 (2017.01); C01B 35/02 (2006.01); C01B 32/97 (2017.01); C01B 32/20 (2017.01); B01J 3/00 (2006.01); B01J 8/02 (2006.01); B01J 8/00 (2006.01)
CPC B01D 53/46 (2013.01) [B01J 3/006 (2013.01); B01J 8/0095 (2013.01); B01J 8/0278 (2013.01); C01B 32/20 (2017.08); C01B 32/97 (2017.08); C01B 32/984 (2017.08); C01B 35/023 (2013.01); B01D 2257/10 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method for removing boron, comprising:
(a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture;
(b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting pressure of the chamber to 1 torr to 100 torr;
(c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture; and
(d) conducting a second carrier gas into the chamber.