US 12,349,609 B2
Low forming voltage OxRAM memory cell, and associated method of manufacture
Gabriel Molas, Grenoble (FR); Thomas Magis, Grenoble (FR); Jean-François Nodin, Grenoble (FR); Alessandro Bricalli, Grenoble (FR); Guiseppe Piccolboni, Verona (IT); Yifat Cohen, Kiryat Tivon (IL); and Amir Regev, Modiin (IL)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIZUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); and WEEBIT NANO LTD, Hod-HaSharon (IL)
Appl. No. 17/777,494
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); and WEEBIT NANO LTD, Hod-HaSharon (IL)
PCT Filed Nov. 17, 2020, PCT No. PCT/EP2020/082390
§ 371(c)(1), (2) Date May 17, 2022,
PCT Pub. No. WO2021/099309, PCT Pub. Date May 27, 2021.
Claims priority of application No. 1912999 (FR), filed on Nov. 21, 2019.
Prior Publication US 2022/0399496 A1, Dec. 15, 2022
Int. Cl. H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/841 (2023.02) [H10N 70/063 (2023.02); H10N 70/24 (2023.02)] 8 Claims
OG exemplary drawing
 
1. An OxRAM (Oxide-based resistive Random Access Memory) resistive memory cell comprising a lower electrode, an upper electrode, and an active layer which extends between the lower electrode and the upper electrode,
the active layer comprising at least one layer of a first electrically insulating oxide, wherein an electrically conductive filament is able to be formed, then subsequently broken and reformed several times successively,
the upper electrode comprising a reservoir layer capable of receiving oxygen, a portion at least of the reservoir layer being made of a metal,
wherein said reservoir layer comprises an upper part made of said metal and a lower part made of a second oxide, the second oxide being an oxide of said metal and comprising a proportion of oxygen such that the second oxide is electrically conductive, with an electrical conductivity greater than 100 Siemens per meter.