US 12,349,519 B2
Light emitting device
Myung Jin Kim, Ansan-si (KR); Kwang Yong Oh, Ansan-si (KR); Ki Bum Nam, Ansan-si (KR); Ji Youn Oh, Ansan-si (KR); Sang Shin Park, Ansan-si (KR); and Michael Lim, Ansan-si (KR)
Assigned to Seoul Semiconductor Co., Ltd., Ansan-si (KR)
Filed by Seoul Semiconductor Co., Ltd., Ansan-si (KR)
Filed on Nov. 3, 2022, as Appl. No. 17/980,499.
Application 17/980,499 is a continuation of application No. 17/071,374, filed on Oct. 15, 2020, granted, now 11,545,599.
Application 17/071,374 is a continuation of application No. 15/518,170, granted, now 10,811,572, issued on Oct. 20, 2020, previously published as PCT/KR2015/010590, filed on Oct. 7, 2015.
Claims priority of application No. 10-2014-0136095 (KR), filed on Oct. 8, 2014; application No. 10-2015-0008212 (KR), filed on Jan. 16, 2015; and application No. 10-2015-0008213 (KR), filed on Jan. 16, 2015.
Prior Publication US 2023/0056190 A1, Feb. 23, 2023
Int. Cl. H10H 20/851 (2025.01); C09K 11/08 (2006.01); C09K 11/61 (2006.01); C09K 11/77 (2006.01); H10H 20/85 (2025.01); H10H 20/854 (2025.01); H10H 20/856 (2025.01)
CPC H10H 20/8513 (2025.01) [C09K 11/0883 (2013.01); C09K 11/617 (2013.01); C09K 11/7734 (2013.01); C09K 11/77342 (2021.01); C09K 11/77348 (2021.01); C09K 11/7774 (2013.01); H10H 20/8506 (2025.01); H10H 20/851 (2025.01); H10H 20/854 (2025.01); H10H 20/856 (2025.01); H01L 2924/181 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A white light emitting device, comprising:
a housing including an inclined inner wall and a substrate including a mounting region;
a light emitting diode chip mounted on the mounting region and configured to emit light having a peak wavelength in a blue wavelength band;
a wavelength converter disposed on the light emitting diode chip;
a first phosphor distributed in the wavelength converter and configured to emit light having a peak wavelength in a range from 520 nm to 550 nm;
a second phosphor distributed in the wavelength converter and configured to emit light having a peak wavelength in a range from 600 nm to 660 nm;
a third phosphor distributed in the wavelength converter and configured to emit light having a longer peak wavelength than that of the light emitting diode chip thereof; and
a reflector disposed on the substrate and configured to reflect light emitted from the light emitting diode chip and the first, second, and third phosphors,
wherein:
the first phosphor is irregularly dispersed in the wavelength converter and emits a first light including a green color range;
the second phosphor is irregularly dispersed in the wavelength converter and emits a second light including a red color range;
the wavelength converter has a roughened region;
a white light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first light, the second light, and the third light,
the second phosphor includes a phosphor represented by A2MF6:Mn, wherein A is any one selected from the group consisting of Li, Na, K, Rb, Ce, and NH4, and M is any one selected from the group consisting of Si, Ti, Nb, and Ta, and
the white light has an R9 of 50 or higher.