US 12,349,511 B2
Radiation emitting semiconductor chip
Ivar Tangring, Regensburg (DE)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/762,746
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Sep. 23, 2020, PCT No. PCT/EP2020/076529
§ 371(c)(1), (2) Date Mar. 23, 2022,
PCT Pub. No. WO2021/058540, PCT Pub. Date Apr. 1, 2021.
Claims priority of application No. 10 2019 126 026.4 (DE), filed on Sep. 26, 2019.
Prior Publication US 2022/0336700 A1, Oct. 20, 2022
Int. Cl. H01L 33/14 (2010.01); H10H 20/814 (2025.01); H10H 20/816 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/816 (2025.01) [H10H 20/814 (2025.01); H10H 20/857 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A radiation emitting semiconductor chip configured to emit electromagnetic radiation from a radiation exit surface, wherein the radiation emitting semiconductor chip comprises:
a carrier comprising a first epitaxial semiconductor layer sequence of a first conductivity type and a second epitaxial semiconductor layer sequence of a second conductivity type different from the first conductivity type arranged thereon;
a first current spreading layer arranged between the first semiconductor layer sequence and the carrier;
a second current spreading layer arranged between the first current spreading layer and the carrier;
a dielectric layer arranged in regions between the first current spreading layer and the second current spreading layer;
a reflective layer arranged between the second current spreading layer and the carrier; and
an electrically insulating layer arranged in regions between the second current spreading layer and the reflective layer;
wherein the reflective layer and the second current spreading layer are in electrically conductive contact;
wherein the first current spreading layer and the second current spreading layer are formed with a transparent, electrically conductive material;
wherein the first current spreading layer and the second current spreading layer are regionally in direct contact.