US 12,349,498 B2
Solar cell and manufacturing method thereof, photovoltaic module, and photovoltaic system
Binglun Han, Changzhou (CN); Daming Chen, Changzhou (CN); and Guangtao Yang, Changzhou (CN)
Assigned to TRINA SOLAR CO., LTD., Changzhou (CN)
Filed by TRINA SOLAR CO., LTD., Changzhou (CN)
Filed on Jul. 10, 2024, as Appl. No. 18/768,660.
Claims priority of application No. 202311078019.3 (CN), filed on Aug. 25, 2023.
Prior Publication US 2024/0363776 A1, Oct. 31, 2024
Int. Cl. H10F 77/14 (2025.01); H10F 71/10 (2025.01); H10F 77/30 (2025.01)
CPC H10F 77/1462 (2025.01) [H10F 71/10 (2025.01); H10F 71/103 (2025.01); H10F 77/315 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A manufacturing method for a solar cell, comprising:
providing a substrate, wherein the substrate has a first surface and a second surface arranged oppositely, and the second surface includes a first region, a second region, and an isolation region located between the first region and the second region;
sequentially stacking a first tunnel oxide layer, a first intrinsic amorphous silicon layer, a second tunnel oxide layer, and a second intrinsic amorphous silicon layer on the second surface of the substrate and in a direction away from the substrate, wherein each of the first tunnel oxide layer, the first intrinsic amorphous silicon layer, the second tunnel oxide layer, and the second intrinsic amorphous silicon layer is partially located in each of the first region, the second region and the isolation region;
removing the second intrinsic amorphous silicon layer and the second tunnel oxide layer located in the second region;
doping the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer located in the first region with a first element, to obtain a first doped layer and a second doped layer respectively; and doping the first intrinsic amorphous silicon layer located in the second region with a second element, to obtain a third doped layer; and
forming an isolation structure in the isolation region, to isolate the first tunnel oxide layer located in the first region from the first tunnel oxide layer located in the second region and isolate the first doped layer and the second doped layer located in the first region from the third doped layer located in the second region.