US 12,349,477 B2
X-ray detector and method for forming the same
Fanli Meng, Beijing (CN); Zeyuan Li, Beijing (CN); Jiangbo Chen, Beijing (CN); and Ding Ding, Beijing (CN)
Assigned to Beijing BOE Technology Development Co., Ltd., Beijing (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
Appl. No. 17/777,422
Filed by Beijing BOE Technology Development Co., Ltd., Beijing (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed May 31, 2021, PCT No. PCT/CN2021/097206
§ 371(c)(1), (2) Date May 17, 2022,
PCT Pub. No. WO2022/252008, PCT Pub. Date Dec. 8, 2022.
Prior Publication US 2024/0170505 A1, May 23, 2024
Int. Cl. A61B 6/00 (2024.01); H01L 23/31 (2006.01); H10D 84/85 (2025.01); H10D 86/01 (2025.01); H10F 39/10 (2025.01)
CPC H10F 39/103 (2025.01) [H01L 23/3171 (2013.01); H10D 84/856 (2025.01); H10D 86/021 (2025.01)] 11 Claims
OG exemplary drawing
 
1. An X-RAY detector, comprising a base substrate and a plurality of detection units arranged on the base substrate, wherein each detection unit comprises a light conversion element for converting an optical signal into an electrical signal and a switching transistor for outputting the electrical signal to a reading signal line, wherein each detection unit further comprises a radiation shielding structure located at a light-entering side of the detection unit, and an orthogonal projection of the radiation shielding structure onto a plane where the base substrate is located fully covers an orthogonal projection of the switching transistor onto the plane where the base substrate is located; wherein the plane where the base substrate is located is perpendicular to a direction from the light-entering side of the base substrate to a light-exiting side of the base substrate;
wherein the switching transistor and the light conversion element are located at two opposite sides of the base substrate respectively, a via hole is provided in the base substrate, and the switching transistor is coupled to the light conversion element through the via hole.