US 12,349,466 B2
Display panel and method for fabricating same
Lixia Li, Shenzhen (CN)
Assigned to TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen (CN)
Appl. No. 17/769,748
Filed by TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen (CN)
PCT Filed Apr. 13, 2022, PCT No. PCT/CN2022/086564
§ 371(c)(1), (2) Date Apr. 17, 2022,
PCT Pub. No. WO2023/184574, PCT Pub. Date Oct. 5, 2023.
Claims priority of application No. 202210350182.X (CN), filed on Apr. 2, 2022.
Prior Publication US 2024/0178234 A1, May 30, 2024
Int. Cl. H10D 86/60 (2025.01); G02F 1/1335 (2006.01); G02F 1/1368 (2006.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01)
CPC H10D 86/60 (2025.01) [H10D 86/0231 (2025.01); H10D 86/441 (2025.01); G02F 1/133512 (2013.01); G02F 1/1368 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A display panel, comprising:
a first substrate comprising:
a first base substrate;
a first metal layer disposed on the first base substrate and comprising a common electrode;
a first semiconductor layer disposed on the first metal layer;
a second metal layer disposed on the first semiconductor layer and comprising a data line;
a second substrate disposed opposite to and spaced apart from the first substrate and comprising:
a second base substrate; and
a third metal layer disposed on the second base substrate; and
a second semiconductor layer disposed between the first metal layer and the third metal layer and insulated from the first semiconductor layer;
wherein the first semiconductor layer and the second semiconductor layer have a same thickness;
wherein the first substrate further comprises a thin film transistor and a data line, the thin film transistor comprises a gate electrode, a source electrode, and a drain electrode, the gate electrode is included in the first metal layer, and the source electrode, the drain electrode, and the data line are included in the second metal layer.