US 12,349,461 B2
Transfer printing for RF applications
Imène Lahbib, Corbeil-Essonnes (FR); Jérôme Loraine, Corbeil-Essonnes (FR); Frédéric Drillet, Corbeil-Essonnes (FR); Albert Kumar, Corbeil-Essonnes (FR); and Gregory U'Ren, Corbeil-Essonnes (FR)
Assigned to X-FAB France SAS, Corbeil-Essonnes (FR)
Filed by X-FAB France SAS, Corbeil-Essonnes (FR)
Filed on Aug. 24, 2022, as Appl. No. 17/894,712.
Application 17/894,712 is a division of application No. 16/866,902, filed on May 5, 2020, granted, now 11,610,916.
Claims priority of application No. 1904958 (FR), filed on May 13, 2019.
Prior Publication US 2022/0415927 A1, Dec. 29, 2022
Int. Cl. H03F 3/193 (2006.01); H03F 1/22 (2006.01); H03F 3/195 (2006.01); H10D 62/85 (2025.01); H10D 86/00 (2025.01)
CPC H10D 86/201 (2025.01) [H03F 3/193 (2013.01); H10D 62/8503 (2025.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor structure for amplifying an RF signal comprising:
a cascode structure comprising a μTP GaN transistor on an SOI wafer or die,
wherein said cascode structure further comprises:
an SOI transistor formed on the SOI wafer or die and connected to said μTP GaN transistor; or
a second μTP GaN transistor on the SOI wafer or die and connected to said μTP GaN transistor.