| CPC H10D 64/258 (2025.01) [H10D 86/441 (2025.01); H10D 86/451 (2025.01)] | 7 Claims |
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1. An electronic device comprising:
a substrate; and
a transistor disposed on the substrate, wherein the transistor comprises:
a semiconductor layer disposed on the substrate;
a gate insulating layer disposed on the semiconductor layer and having a plurality of first contact holes and a plurality of second contact holes;
a gate electrode disposed on the gate insulating layer;
a first electrode disposed on the gate electrode and contacting the semiconductor layer through the plurality of first contact holes; and
a second electrode disposed on the gate electrode and contacting the semiconductor layer through the plurality of second contact holes,
wherein in a top view, the semiconductor layer has a first side edge, the first electrode has a first side away from the gate electrode, and one of the plurality of first contact holes has a first edge away from the gate electrode,
wherein in the top view, a minimum distance between the first side of the first electrode and the gate electrode is less than a minimum distance between the first edge of the one of the plurality of first contact holes and the gate electrode, and
wherein in the top view, a minimum distance between the first side edge of the semiconductor layer and the gate electrode is less than the minimum distance between the first edge of the one of the plurality of first contact holes and the gate electrode.
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