US 12,349,413 B2
Semiconductor device with oxide-based semiconductor channel
Jih-Chao Chiu, New Taipei (TW); Song-Ling Li, Taoyuan (TW); and Chee-Wee Liu, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and NATIONAL TAIWAN UNIVERSITY, Taipei (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and NATIONAL TAIWAN UNIVERSITY, Taipei (TW)
Filed on Jun. 1, 2022, as Appl. No. 17/829,773.
Prior Publication US 2023/0395725 A1, Dec. 7, 2023
Int. Cl. H10D 30/67 (2025.01); H01L 21/02 (2006.01); H01L 21/465 (2006.01); H10D 30/43 (2025.01); H10D 62/10 (2025.01); H10D 99/00 (2025.01)
CPC H10D 30/6755 (2025.01) [H01L 21/02565 (2013.01); H01L 21/02603 (2013.01); H01L 21/02631 (2013.01); H01L 21/465 (2013.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 99/00 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a fin over a substrate, the fin comprising alternately stacking first oxide-based semiconductor layers and second oxide-based semiconductor layers;
removing the second oxide-based semiconductor layers to form a plurality of spaces each between corresponding ones of the first oxide-based semiconductor layers; and
depositing in sequence a gate dielectric layer and a gate metal into the plurality of spaces each between corresponding ones of the second oxide-based semiconductor layers.