US 12,349,403 B2
Semiconductor device comprising oxygen blocking films
Yuichi Yanagisawa, Atsugi (JP); Ryota Hodo, Atsugi (JP); and Satoru Okamoto, Isehara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/428,825
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
PCT Filed Feb. 18, 2020, PCT No. PCT/IB2020/051316
§ 371(c)(1), (2) Date Aug. 5, 2021,
PCT Pub. No. WO2020/174315, PCT Pub. Date Sep. 3, 2020.
Claims priority of application No. 2019-035103 (JP), filed on Feb. 28, 2019.
Prior Publication US 2022/0020883 A1, Jan. 20, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 29/04 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H10D 30/67 (2025.01); H10D 62/40 (2025.01); H10D 99/00 (2025.01)
CPC H10D 30/6704 (2025.01) [H10D 30/673 (2025.01); H10D 30/6755 (2025.01); H10D 30/6757 (2025.01); H10D 62/405 (2025.01); H10D 99/00 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first insulator;
a first oxide over the first insulator;
a first oxygen blocking film provided between the first insulator and the first oxide;
a second oxide in contact with the first insulator and in contact with a side surface of the first oxide; and
a second oxygen blocking film over the first insulator, the second oxide, and the first oxide,
wherein the second oxygen blocking film comprises a region in contact with a top surface of the first oxide, and
wherein the first oxygen blocking film and the second oxygen blocking film comprise a material which is less likely to pass oxygen than the second oxide.